| PART |
Description |
Maker |
| MCM72BB64SG66 MCM72BB64SG60 MCM72BB32 MCM72BB32SG6 |
256KB and 512KB BurstRAM Secondary Cache Module for Pentium
|
MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
|
| MPC2003SG50 MPC2003SG60 MPC2003SG66 MPC2002 MPC200 |
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems 64K X 36 CACHE SRAM MODULE, 9 ns, DMA136
256KB and 512KB BurstRAM Secondary Cache Module for PowerPC - Based Systems 64K X 36 CACHE SRAM MODULE, 14 ns, DMA136
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| M27C400 6674 M27C400-80XF6TR M27C400-100B1TR M27C4 |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
From old datasheet system
|
Advanced Micro Devices, Inc.
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| MPC2105C MPC2106CDG66 |
(MPC2105C / MPC2106C) 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms
512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC PReP/CHRP Platforms 128K X 72 CACHE SRAM MODULE, 9 ns, PDMA178
|
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| M27V400 M27V400-100B1TR M27V400-100B6TR M27V400-10 |
NND - 4 MBIT (512KB X8 OR 256KB X16) UV EPROM AND OTP EPROM
4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16紫外线存储器和OTP存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| LH28F400BVHE-TL85 |
4MB (512KB x 8/256KB x 16) SmartVoltage Flash Memory(4M512Kx 8/256K位x 16)闪速存储器)
|
Sharp Corporation
|
| CXK79M72C165GB CXK79M36C165GB |
18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs (256Kb x 72 or 512Kb x 36)
|
Sony Corporation
|
| M29W400BT 6584 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)Low Voltage Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| CY14B104NA-ZSP20XCT CY14B104NA-ZSP20XIT CY14B104LA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 256K X 16 NON-VOLATILE SRAM, 20 ns, PDSO54
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| MCM67B618B MCM67B618BFN9 |
MCM67B618B 64K X 18 Bit BurstRAM Synchronous Fast Static RAM
64K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write
From old datasheet system
|
Motorola, Inc
|
| M29F002B M295V002B-120K6TR M295V002B-120XK6TR M29F |
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位256Kb × 8，启动座单电源闪
2 Mbit 256Kb x8, Boot Block Single Supply Flash Memory 2兆位56Kb × 8，启动座单电源闪
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2兆位56Kb × 8，启动座单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
